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IXYS
Absolute Maximum Ratings VRRM VDRM [V] MCC
1200 1400 1600 1800 500-12io1 500-14io1 500-16io1 500-18io1
Date: 17.03.2005 Data Sheet Issue: 2
Thyristor/Diode Modules M## 500
MCD
500-12io1 500-14io1 500-16io1 500-18io1
MDC
500-12io1 500-14io1 500-16io1 500-18io1
MCA
500-12io1 500-14io1 500-16io1 500-18io1
MCK
500-12io1 500-14io1 500-16io1 500-18io1
MCDA
500-12io1 500-14io1 500-16io1 500-18io1
MDCA
500-12io1 500-14io1 500-16io1 500-18io1
VOLTAGE RATINGS
VDRM VDSM VRRM VRSM Repetitive peak off-state voltage Repetitive peak reverse voltage
1) 1)
MAXIMUM LIMITS
1200-1800 1200-1800 1200-1800
1)
UNITS
V V V V
Non-repetitive peak off-state voltage
1)
Non-repetitive peak reverse voltage
1300-1900
OTHER RATINGS
IT(AV)M IT(AV)M IT(AV)M IT(RMS)M IT(d.c.) ITSM ITSM2 It It (di/dt)cr VRGM PG(AV) PGM VISOL TVj op Tstg
2 2
MAXIMUM LIMITS
2) 2) 2)
UNITS
A A A A A kA kA
Maximum average on-state current, TC = 89C Maximum average on-state current. TC = 85C Nominal RMS on-state current, TC = 55C D.C. on-state current, TC = 55C
2)
500 545 376 1294 1029
3)
Maximum average on-state current. TC = 100C
Peak non-repetitive surge tp = 10 ms, VRM = 60%VRRM Peak non-repetitive surge tp = 10 ms, VRM 10V
2 2 3) 3)
16.5 18.2 1.36x10 1.66x10 150
6 6
I t capacity for fusing tp = 10 ms, VRM = 60%VRRM I t capacity for fusing tp = 10 ms, VRM 10 V
3)
As As A/s A/s V W W V C C
2
2
Critical rate of rise of on-state current (repetitive) Peak reverse gate voltage Mean forward gate power Peak forward gate power Isolation Voltage
5)
4) 4)
Critical rate of rise of on-state current (non-repetitive)
300 5 4 30 3500 -40 to +125 -40 to +150
Operating temperature range Storage temperature range
Notes: 1) De-rating factor of 0.13% per C is applicable for Tvj below 25C. 2) Single phase; 50 Hz, 180 half-sinewave. 3) Half-sinewave, 125C Tvj initial. 4) VD = 67% VDRM, IFG = 2 A, tr 0.5s, TC = 125C. 5) AC RMS voltage, 50 Hz, 1min test
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2 Page 1 of 11 March, 2005
IXYS
Thyristor Characteristics PARAMETER
VTM VTM VT0 rT IDRM IRRM VGT IGT IH tgd tgt Qrr Qra Irm trr tq Maximum peak on-state voltage Maximum peak on-state voltage Threshold voltage Slope resistance Peak off-state current Peak reverse current Gate trigger voltage Gate trigger current Holding current Gate controlled turn-on delay time Turn-on time Recovered Charge Recovered Charge, 50% chord Reverse recovery current Reverse recovery time, 50% chord Turn-off time RthJC RthCH F1 F2 Wt Thermal resistance, junction to case 4.25 10.2 300 1.5
Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
MIN. TYP. MAX. TEST CONDITIONS 1)
0.6 1.2 2200 1600 120 25 200 1.5 0.85 0.27 70 70 3.0 300 VD = 80% VDRM, linear ramp, Gate o/c Rated VDRM Rated VRRM Tvj = 25C, VD = 10 V, IT = 3 A ITM = 1700 A
UNITS
V V V m V/s mA mA V mA mA s C C A s
1.43 ITM = 1500 A
(dv/dt)cr Critical rate of rise of off-state voltage 1000
1000 Tvj = 25C 1.5 2.5 1900 ITM = 1000 A, tp = 1 ms, di/dt = 10A/s, VR = 50 V ITM = 1000 A, tp = 1 ms, di/dt = 10 A/s, VR = 50 V, VDR = 80%VDRM, dvDR/dt = 20 V/s ITM = 1000 A, tp = 1 ms, di/dt = 10 A/s, VR = 50 V, VDR = 80%VDRM, dvDR/dt = 200 V/s IFG = 2 A, tr = 0.5 s, VD = 67%VDRM, ITM = 2000 A, di/dt = 10 A/s, Tvj = 25C
s K/W K/W K/W K/W Nm
0.062 Single Thyristor 0.031 Whole Module 0.02 Single Thyristor 0.01 Whole Module 5.75 13.8 2)
Thermal resistance, case to heatsink Mounting force (to heatsink) Mounting force (to terminals) Weight
Nm kg
Diode Characteristics PARAMETER
VFM VT0 rT IRRM Qrr Qra IRM trr Maximum peak forward voltage Threshold voltage Slope resistance Peak reverse current Recovered Charge Recovered Charge, 50% chord Reverse recovery current Reverse recovery time, 50% chord
Notes: 1) Unless otherwise indicated Tvj=125C. 2) Screws must be lubricated
MIN. TYP. MAX. TEST CONDITIONS
2200 1800 145 25 0.98 ITM = 1800 A 0.72 0.143 50 Rated VRRM
1)
UNITS
V V m mA C C A s
2250 ITM = 1000 A, tp = 1ms, di/dt = 10 A/s, VR = 50 V -
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Page 2 of 11
March, 2005
IXYS
Notes on Ratings and Characteristics 1.0 Voltage Grade Table Voltage Grade 12 14 16 18 VDRM VDSM VRRM V 1200 1400 1600 1800
Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
VRSM V 1300 1500 1700 1900
VD VR DC V 820 930 1040 1150
2.0 Extension of Voltage Grades This report is applicable to other voltage grades when supply has been agreed by Sales/Production. 3.0 De-rating Factor A blocking voltage de-rating factor of 0.13%/C is applicable to this device for Tvj below 25C. 4.0 Repetitive dv/dt Standard dv/dt is 1000V/s. 5.0 Snubber Components When selecting snubber components, care must be taken not to use excessively large values of snubber capacitor or excessively small values of snubber resistor. Such excessive component values may lead to device damage due to the large resultant values of snubber discharge current. If required, please consult the factory for assistance. 6.0 Rate of rise of on-state current The maximum un-primed rate of rise of on-state current must not exceed 300A/s at any time during turnon on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not exceed 150A/s at any time during turn-on. Note that these values of rate of rise of current apply to the total device current including that from any local snubber network. 7.0 Gate Drive The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/s
IG tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration (tp1) should be 20s or sufficient to allow the anode current to reach ten times IL, whichever is greater. Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The `back-porch' current IG should remain flowing for the same duration as the anode current and have a magnitude in the order of 1.5 times IGT.
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Page 3 of 11
March, 2005
IXYS
8.0 Computer Modelling Parameters 8.1 Thyristor Dissipation Calculations
Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
I AV =
- VT 0 + VT 0 + 4 ff rT WAV 2 ff 2 rT
2
2
WAV =
and:
T Rth
T = T j max - TK
Where VT0 = 0.85 V, rT = 0.27 m for the thyristor and VT0 = 0.72 V, rT = 0.143 m for the diode.
Rth = Supplementary thermal impedance, see table below and ff = Form factor, see table below.
Supplementary Thermal Impedance Conduction Angle Square wave Sine wave 30 0.07067 0.06767 60 0.06791 0.06536 90 0.06629 0.06408 120 0.06525 0.0633 180 0.06395 0.062 270 0.06277 d.c. 0.062
Form Factors Conduction Angle Square wave Sine wave 30 3.464 3.98 60 2.449 2.778 90 2 2.22 120 1.732 1.879 180 1.414 1.57 270 1.149 d.c. 1
8.2 Calculating thyristor VT using ABCD Coefficients The on-state characteristic IT vs. VT, on page 6 is represented in two ways; (i) the well established VT0 and rT tangent used for rating purposes and (ii) a set of constants A, B, C, D, forming the coefficients of the representative equation for VT in terms of IT given below:
VT = A + B ln (I T ) + C I T + D I T
The constants, derived by curve fitting software, are given below for both hot and cold characteristics. The resulting values for VT agree with the true device characteristic over a current range, which is limited to that plotted. 25C Coefficients A B C D 0.7860338 9.929062x10 1.94704x10
-3 -4 -3
125C Coefficients A B C D -0.099137717 0.1987038 4.23812x10 -0.01453705
-4
7.409213x10
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Page 4 of 11
March, 2005
IXYS
8.3 D.C. Thermal Impedance Calculation
Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Where p = 1 to n n= t rt rp p
-t p rt = rp 1 - e p =1 p=n

number of terms in the series and = Duration of heating pulse in seconds. = Thermal resistance at time t. = Amplitude of pth term. = Time Constant of rth term).
The coefficients for this device are shown in the tables below: D.C.
Term
1 0.05428 2.69428
2 4.4894x10 0.126017
-3
3 2.3382x10 0.013878
-3
4 8.759x10 1.435x10
-4 -3
rp
p
9.0 Reverse recovery ratings (i) Qra is based on 50% IRM chord as shown in Fig. 1
Fig. 1 (ii) Qrr is based on a 150 s integration time i.e.
150 s
Qrr =
(iii)
i
0
rr
.dt
K Factor =
t1 t2
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Page 5 of 11
March, 2005
IXYS
Thyristor Curves Figure 1 - On-state characteristics of Limit device
10000
Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Figure 2 - Transient thermal impedance
0.1
M##500-12io1-18io1 Issue 2
M##500-12io1-18io1 Issue 2
Single Thyristor
Tj = 25C
Tj = 125C
0.01
Instantaneous On-state current - ITM (A)
1000
Thermal impedance (K/W)
0.001
0.0001
100 0.5 1 1.5 2 2.5 3 3.5 Instantaneous On-state voltage - VTM (V)
0.00001 0.00001 0.0001
0.001
0.01
0.1
1
10
100
Time (s)
Figure 3 - Gate characteristics - Trigger limits
8
M##500-12io1-18io1 Issue 2 Tj=25C
Figure 4 - Gate characteristics - Power curves
35
M##500-12io1-18io1 Issue 2
Tj=25C
7
30
6
Max VG dc
25 Gate Trigger Voltage - VGT (V)
Max VG dc
Gate Trigger Voltage - VGT (V)
5
20
4
IGT, VGT
15
3
PG Max 30W dc
125C
2
-10C
-40C
25C
10
1
IGD, VGD
5
Min VG dc
PG 4W dc
Min VG dc
0 0 0.2 0.4 0.6 0.8 1 Gate Trigger Current - IGT (A)
0 0 2 4 6 8 10 Gate Trigger Current - IGT (A)
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Page 6 of 11
March, 2005
IXYS
Figure 5 - Total recovered charge, Qrr
10000 M##500-12io1-18io1 Issue 2 Tj=125C
Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Figure 6 - Recovered charge, Qra (50% chord)
10000 M##500-12io1-18io1 Issue 2 Tj=125C
2000A 1500A 1000A Recovered charge - Qrr (C) 500A Recovered charge - Qra, 50% chord (C)
2000A 1500A 1000A 500A
1000 1 10 di/dt (A/s) 100 1000
1000 1 10 di/dt (A/s) 100 1000
Figure 7 - Peak reverse recovery current, Irm
1000.00 M##500-12io1-18io1 Issue 2
Tj=125C
Figure 8 - Maximum recovery time, trr (50% chord)
100 M##500-12io1-18io1 Issue 2 Tj=125C
2000A 1500A 1000A 500A
Reverse recovery time (50% chord) - trr (s)
Reverse recovery current - Irm (A)
10
2000A 1500A 1000A 500A
100.00 1 10 di/dt (A/s) 100 1000
1 1 10 di/dt (A/s) 100 1000
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Page 7 of 11
March, 2005
IXYS
Figure 9 - On-state current vs. Power dissipation - Sine wave
1800 M##500-12io1-18io1 Issue 2
Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Figure 10 - On-state current vs. Heatsink temperature - Sine wave
140
M##500-12io1-18io1 Issue 2
1600
60 30
90 120
180
120
Maximum permissable heatsink temperature (C)
1400
100
Maximum forward dissipation (W)
1200
1000
80
800
60
600
40
400
20
200
30
60
90
120 180
0 0 200 400 600 800 1000 Mean forward current (A) (Whole cycle averaged)
0 0 200 400 600 800 1000 Mean forward current (A) (Whole cycle averaged)
Figure 11 - On-state current vs. Power dissipation - Square wave
1800
M##500-12io1-18io1 Issue 2
Figure 12 - On-state current vs. Heatsink temperature - Square wave
140
M##500-12io1-18io1 Issue 2
1600 120 1400 Maximum permissible heatsink temperature (C) 100
Maximum forward dissipation (W)
1200
1000
800
d.c. 270 180 120 90 60 30
80
60
600
40
400 20 200
30
60 90 120 180 270 d.c.
0 0 200 400 600 800 1000 1200 1400 Mean Forward Current (Amps) (Whole Cycle Averaged)
0 0 200 400 600 800 1000 1200 1400 Mean Forward Current (Amps) (Whole Cycle Averaged)
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Page 8 of 11
March, 2005
IXYS
Figure 13 - Maximum surge and I t Ratings
2
Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Gate may temporarily lose control of conduction angle
100000
I2t: VRRM 10V I2t: 60% VRRM
1.00E+07
Total peak half sine surge current (A)
10000
1.00E+06 ITSM: VRRM 10V ITSM: 60% VRRM
Tj (initial) = 125C
M##500-12io1-18io1 Issue 2
1000
1
3
5
10
1
5
10
50
100
1.00E+05
Duration of surge (ms)
Duration of surge (cycles @ 50Hz)
Diode curves Figure 14 - Instantaneous forward voltage VF
10000 M##500-12io1-18io1 Issue 2
Figure 15 - Transient thermal impedance
0.1
M##500-12io1-18io1 Issue 2
Single Diode
25C
125C
0.01
Instantaneous forward current - IFM (A)
Thermal impedance (K/W)
0.001
1000
0.0001
0.00001
100 0 0.5 1 1.5 2 Maximum instantaneous forward voltage - VFM (V)
0.000001 1E-05 0.0001 0.001
0.01
0.1
1
10
100
Time (s)
Page 9 of 11 March, 2005
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Maximum I2t (A2s)
IXYS
Figure 16 - Total recovered charge, Qrr
10000 M##500-12io1-18io1 Issue 2 Tj=125C
Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
Figure 17 - Recovered charge, Qra (50% chord)
10000 M##500-12io1-18io1 Issue 2 Tj=125C
2000A 1500A Recovered charge - Qra, 50% chord (C) 1000A 500A Recovered charge - Qrr (C) 2000A 1500A 1000A 500A
1000 1 10 di/dt (A/s) 100 1000
1000 1 10 di/dt (A/s) 100 1000
Figure 18 - Peak reverse recovery current, Irm
10000.00 M##500-12io1-18io1 Issue 2 Tj=125C
Figure 19 - Maximum recovery time, trr (50% chord)
100 M##500-12io1-18io1 Issue 2 Tj=125C
2000A 1500A 1000A 500A 1000.00
Reverse recovery time (50% chord) - trr (s)
Reverse recovery current - Irm (A)
10 2000A 1500A 1000A 500A
100.00 1 10 di/dt (A/s) 100 1000
1 1 10 di/dt (A/s) 100 1000
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Page 10 of 11
March, 2005
IXYS
Outline Drawing & Ordering Information
Thyristor/Diode Module Types M##500-12io1 and M##500-18io1
3
67 1
542
MCC
3
1
542
MCD
3
67 1
2
MDC
376
1
542
MCA
3
67 1 4 5
2
MCK
3
1
542
MCDA
37 6
1
2
MDCA
ORDERING INFORMATION M
Fixed Type Code
(Please quote 11 digit code as below)
##
Configuration code CC, CD, DC, CA, CK, CDA, DCA
500
Average Current Rating Voltage code VRRM/100 12-18
io
i = Critical dv/dt 1000 V/s o = Typical turn-off time
1
Fixed Version Code
Order code: MCD500-14io1- MCD configuration, 1400V VRRM IXYS Semiconductor GmbH Edisonstrae 15 D-68623 Lampertheim Tel: +49 6206 503-0 Fax: +49 6206 503-627 E-mail: marcom@ixys.de IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Tel: +1 (408) 982 0700 Fax: +1 (408) 496 0670 E-mail: sales@ixys.net
IXYS
www.ixys.com
Westcode Semiconductors Ltd Langley Park Way, Langley Park, Chippenham, Wiltshire, SN15 1GE. Tel: +44 (0)1249 444524 Fax: +44 (0)1249 659448 E-mail: WSL.sales@westcode,com Westcode Semiconductors Inc 3270 Cherry Avenue Long Beach CA 90807 USA Tel: +1 (562) 595 6971 Fax: +1 (562) 595 8182 E-mail: WSI.sales@westcode.com
WESTCODE
An IXYS Company
www.westcode.com
The information contained herein is confidential and is protected by Copyright. The information may not be used or disclosed except with the written permission of and in the manner permitted by the proprietors IXYS Semiconductors GmbH. In the interest of product improvement, IXYS reserves the right to change specifications at any time without prior notice. Devices with a suffix code (2-letter, 3-letter or letter/digit/letter combination) added to their generic code are not necessarily subject to the conditions and limits contained in this report. (c) IXYS Semiconductor GmbH.
Rating Report. Types M##500-12io1 and M##500-18io1 Issue 2
Page 11 of 11
March, 2005

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